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Warranty 2 year
Dahua SSD-C900VN1TB NVMe M.2 1TB Solid State Drive
SKU:
DHI-SSD-C900VN1TB
- Capacity 1 TB
- Form Factor M.2 2280
- Port PCIe Gen 3.0 x 4
- Sequential Read 3 Up to 3,400MB/s
- Sequential Write 3 Up to 3,000MB/s
- 4K Random Read 3 Up to 360,000
- 4K Random Write 3 Up to 280,000
219 ุฑ.ุณ Original price was: 219 ุฑ.ุณ.199 ุฑ.ุณCurrent price is: 199 ุฑ.ุณ.
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Description
Specifications
Product Model | DHI-SSD-C900VN1TB |
Capacity | 1 TB |
Form Factor | M.2 2280 |
Port | PCIe Gen 3.0 x 4 |
Net Weight | Max. 8 g (0.02 lb) |
Product Dimensions 2 |
80.00 mm ร 23.00 mm ร 4.80 mm (3.15โณ ร 0.91โณ ร 0.19โณ)
|
Packaging Dimensions |
140.5 mm ร 105.5 mm ร 15.50 mm (5.53โณ ร 4.15โณ ร 0.61โณ)
|
Memory Component | 3D TLC |
Power Consumption 3 | 4.10 W (max); 0.611 W (idle) |
S.M.A.R.T | ยญYes |
TRIM | ยญYes |
Garbage Collection | Yes |
Sequential Read 3 | Up to 3,400MB/s |
Sequential Write 3 | Up to 3,000MB/s |
4K Random Read 3 | Up to 360,000 |
4K Random Write 3 | Up to 280,000 |
MTBF | 1,500,000 hours |
Operating Temperature |
0 ยฐC to +70 ยฐC (+32 ยฐF to +158 ยฐF)
|
Storage Temperature |
โ40 ยฐC to +85 ยฐC (โ40 ยฐF to +185 ยฐF)
|
Operating Humidity | 5%โ95% (non-condensing) |
Vibration Resistance | 7-800 Hz, 3.08 G |
Shock Resistance | 1,500 G/0.5 ms (half sine wave) |
TBW | 512 TB |
Features
- Adopts high-quality 3D NAND wafer level chip
- Supports PCIe3.0 x4 and NVMe 1.3 protocol
- All-metal cooling plate is included; equipped with intelligent temperature control technology
- Adopts TRIM to improve read/write performance and speed
- Supports Max. Write technology for full-disk SLC cache
- Supports LDPC ECC to enhance data reliability
- Low power consumption management
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